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RD3P100SNTL1

Discrete Semiconductor Products

RD3P100SNTL1

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Rohm Semiconductor

MOSFET, N-CH, 100V, 10A, 150DEG C, 20W

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Search across all available documentation for this part.

DocumentsBasics of Thermal Resistance and Heat Dissipation How to Create Symbols for PSpice Models +39

RD3P100SNTL1

Discrete Semiconductor Products

RD3P100SNTL1

Active

Rohm Semiconductor

MOSFET, N-CH, 100V, 10A, 150DEG C, 20W

Deep-Dive with AI

DocumentsBasics of Thermal Resistance and Heat Dissipation How to Create Symbols for PSpice Models +39

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3P100SNTL1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	133 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	13604	$ 1.73
Newark	Each (Supplied on Cut Tape)	1	$ 1.51
		10	$ 1.18
		25	$ 1.06
		50	$ 0.95
		100	$ 0.83
		250	$ 0.75
		500	$ 0.67
		1000	$ 0.62

Description

General part information

RD3P100SN Series

RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.

Documents

Technical documentation and resources

Basics of Thermal Resistance and Heat Dissipation

How to Create Symbols for PSpice Models

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Part Explanation

Application Note

Notes for Calculating Power Consumption:Static Operation

Compliance of the RoHS directive

Environmental Data

What Is Thermal Design

Precautions When Measuring the Rear of the Package with a Thermocouple

Types and Features of Transistors

Application Note

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Anti-Whisker formation - Transistors

Package Information

Reliability Test Result

Manufacturing Data

Two-Resistor Model for Thermal Simulation

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

TO-252_TL1 Taping Information

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

About Flammability of Materials

Environmental Data

List of Transistor Package Thermal Resistance

Method for Monitoring Switching Waveform

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Inner Structure

Package Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Report of SVHC under REACH Regulation

Environmental Data

Notes for Temperature Measurement Using Thermocouples

RD3P100SN ESD Data

Characteristics Data

What is a Thermal Model? (Transistor)

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

About Export Regulations

Export Information

Constitution Materials List

Environmental Data

How to Use LTspice® Models

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

PCB Layout Thermal Design Guide

Package Dimensions

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

RD3P100SN Data Sheet

Condition of Soldering / Land Pattern Reference

Package Information

Technical Data Sheet EN

RD3P100SN Series

Nch 100V 10A Power MOSFET

Part	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RD3P100SNTL1	20 V	TO-252	2.5 V	150 °C	-55 °C	10 A	Surface Mount	4 V	10 V	100 V	20 W	18 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	700 pF	N-Channel	133 mOhm