Discrete Semiconductor Products

VS-12EWH06FNTRL-M3

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DIODE GEN PURP 600V 12A DPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 12A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-12EWH06FNTRL-M3

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Speed	500 ns, 200 mA
Supplier Device Package	TO-252AA (DPAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2.5 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Technology	Speed [Min]
Vishay General Semiconductor - Diodes Division VS-12EWH06FNTR-M3	175 ░C	-65 C	600 V	10 µA	200 mA 500 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	TO-252AA (DPAK)	Surface Mount	12 A	Standard
Vishay General Semiconductor - Diodes Division VS-12EWH06FN-M3	175 ░C	-65 C	600 V	10 µA		DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	TO-252AA (DPAK)	Surface Mount	12 A	Standard	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-12EWH06FNTRL-M3	150 °C	-40 °C	600 V	10 µA	200 mA 500 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	TO-252AA (DPAK)	Surface Mount	12 A	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 12A Surface Mount TO-252AA (DPAK)

Technical documentation and resources