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TO-220AB PKG
Discrete Semiconductor Products

IRFB5620PBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 72.5 MOHM;

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Search across all available documentation for this part.

DocumentsIR Part Numbering SystemDatasheet+1
TO-220AB PKG
Discrete Semiconductor Products

IRFB5620PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 72.5 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB5620PBF
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1710 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]144 W
Rds On (Max) @ Id, Vgs72.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 962$ 1.91
Tube 1$ 3.32
10$ 2.17
100$ 1.51
500$ 1.23
1000$ 1.14
2000$ 1.09
MouserN/A 1$ 1.65
10$ 1.36
25$ 0.84
100$ 0.82
250$ 0.82
500$ 0.80
1000$ 0.79
5000$ 0.76

Description

General part information

IRFB5620 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.