Specification	SSM3J35CT,L3F

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	12.2 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3J35CT Series

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Toshiba Semiconductor and Storage SSM3J35CT,L3F	8 Ohm	100 mW	CST3	P-Channel	100 mA	150 °C	4 V	1.2 V	Surface Mount	MOSFET (Metal Oxide)	20 V	1 V	SC-101 SOT-883	12.2 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -0.1 A, 8.0 Ω@4V, SOT-883(CST3)

Technical documentation and resources