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8-Power TDFN
Discrete Semiconductor Products

BSC0802LSATMA1

Obsolete
INFINEON

OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 3.4 MOHM;

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8-Power TDFN
Discrete Semiconductor Products

BSC0802LSATMA1

Obsolete
INFINEON

OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 3.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0802LSATMA1
Current - Continuous Drain (Id) @ 25°C20 A, 100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]46 nC
Input Capacitance (Ciss) (Max) @ Vds6500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)156 W
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.29
10$ 2.83
100$ 1.99
500$ 1.64
1000$ 1.52
2000$ 1.48
Digi-Reel® 1$ 4.29
10$ 2.83
100$ 1.99
500$ 1.64
1000$ 1.52
2000$ 1.48
N/A 1111$ 4.14
Tape & Reel (TR) 5000$ 1.48
NewarkEach (Supplied on Full Reel) 5000$ 1.54

Description

General part information

BSC0802 Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products with best-in-class performance for differentiated designs in compact, lightweight packages.

Documents

Technical documentation and resources