Discrete Semiconductor Products

PSMN2R5-40YLBX

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N-CHANNEL 40 V, 2.6 MOHM, 160 A LOGIC LEVEL MOSFET IN LFPAK56 USING OPTIMIZED NEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY

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DocumentsPSMN2R5-40YLBX | Datasheet Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)+18

Discrete Semiconductor Products

PSMN2R5-40YLBX

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Nexperia USA Inc.

N-CHANNEL 40 V, 2.6 MOHM, 160 A LOGIC LEVEL MOSFET IN LFPAK56 USING OPTIMIZED NEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY

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DocumentsPSMN2R5-40YLBX | Datasheet Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)+18

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R5-40YLBX

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5627 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max) [Max]	147 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.05 V

PSMN2R5-40YLB Series

N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Feature	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN2R5-40YLBX	Surface Mount	MOSFET (Metal Oxide)	5627 pF	2.6 mOhm	Schottky Diode (Body)	N-Channel	79 nC	2.05 V	175 °C	-55 °C	SC-100 SOT-669	20 V	147 W	LFPAK56 Power-SO8	40 V	160 A	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1425	$ 1.87
Mouser	N/A	1	$ 1.50
		10	$ 0.93
		100	$ 0.62
		500	$ 0.49
		1500	$ 0.43
		4500	$ 0.36
		24000	$ 0.36

Description

General part information

PSMN2R5-40YLB Series

160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.