Discrete Semiconductor Products

AUIRF7734M2TR

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MOSFET N-CH 40V 17A DIRECTFET M2

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 17A DIRECTFET M2

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7734M2TR

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric M2
Power Dissipation (Max)	46 W, 2.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	DirectFET™ Isometric M2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	FET Type	Supplier Device Package	Technology	Package / Case	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Qualification	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
INFINEON AUIRF7734M2TR	2.5 W 46 W	N-Channel	DirectFET™ Isometric M2	MOSFET (Metal Oxide)	DirectFET™ Isometric M2	20 V	Surface Mount	4.9 mOhm	AEC-Q101	4 V	10 V	2545 pF	Automotive	72 nC	175 °C	-55 °C	17 A	40 V
INFINEON AUIRF7734M2TR	2.5 W 46 W	N-Channel	DirectFET™ Isometric M2	MOSFET (Metal Oxide)	DirectFET™ Isometric M2	20 V	Surface Mount	4.9 mOhm	AEC-Q101	4 V	10 V	2545 pF	Automotive	72 nC	175 °C	-55 °C	17 A	40 V

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General part information

N-Channel 40 V 17A (Ta) 2.5W (Ta), 46W (Tc) Surface Mount DirectFET™ Isometric M2

Technical documentation and resources