Discrete Semiconductor Products

SQ2309ES-T1_BE3

Obsolete

MOSFET P-CH 60V 1.7A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 1.7A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2309ES-T1_BE3

Current - Continuous Drain (Id) (Tc)	1.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	8.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	265 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	335 mOhm, 335 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Grade	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Package / Case	Technology	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Input Capacitance (Ciss) (Max)	Qualification
Vishay Dale SQ2309ES-T1_BE3	Automotive	60 V	2.5 V	SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	Surface Mount	2 W	1.7 A	20 V	-55 °C	175 °C	335 mOhm 335 mOhm	8.5 nC	10 V	4.5 V	P-Channel	265 pF	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 60 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources