Discrete Semiconductor Products

IMZA75R090M1HXKSA1

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THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY

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Discrete Semiconductor Products

IMZA75R090M1HXKSA1

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INFINEON

THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMZA75R090M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	542 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	113 W
Rds On (Max) @ Id, Vgs	83 mOhm
Supplier Device Package	PG-TO247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.6 V

IMZA75R090 Series

Part	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id
INFINEON IMZA75R090M1HXKSA1	SiC (Silicon Carbide Junction Transistor)	83 mOhm	175 °C	-55 °C	750 V	15 nC	23 A	542 pF	N-Channel	TO-247-4	PG-TO247-4	-5 V	23 V	15 V 20 V	113 W	Through Hole	5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	218	$ 6.87
	Tube	1	$ 7.66
		10	$ 6.92
		30	$ 6.60
		120	$ 5.73
		270	$ 5.47
		510	$ 4.99
		1020	$ 4.35
Newark	Each	1	$ 8.40
		10	$ 7.51
		25	$ 6.80
		50	$ 6.48
		100	$ 5.86
		480	$ 5.21
		720	$ 5.10

Description

General part information

IMZA75R090 Series

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.

Documents

Technical documentation and resources