Discrete Semiconductor Products
CBS05F30,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 30 V/0.5 A SCHOTTKY BARRIER DIODE, CST2B
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Discrete Semiconductor Products
CBS05F30,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 30 V/0.5 A SCHOTTKY BARRIER DIODE, CST2B
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CBS05F30,L3F |
|---|---|
| Capacitance @ Vr, F | 118 pF |
| Current - Average Rectified (Io) | 500 mA |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 125 °C |
| Package / Case | 2-SMD, No Lead |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | CST2B |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4481 | $ 2.76 | |
Description
General part information
CBS05F30 Series
Diodes, 30 V/0.5 A Schottky Barrier Diode, CST2B
Documents
Technical documentation and resources