Discrete Semiconductor Products

IRF3205ZPBF

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INFINEON

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 55 V, 75 A, 0.0065 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF3205ZPBF

Active

INFINEON

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 55 V, 75 A, 0.0065 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF3205ZPBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF3205 Series

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Package / Case	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IRF3205ZLPBF	6.5 mOhm	20 V	110 nC	4 V	10 V	175 °C	-55 °C	75 A	Through Hole	N-Channel	55 V	3450 pF	170 W	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	TO-262
INFINEON IRF3205ZPBF	6.5 mOhm	20 V	110 nC	4 V	10 V	175 °C	-55 °C	75 A	Through Hole	N-Channel	55 V	3450 pF	170 W	TO-220-3	MOSFET (Metal Oxide)	TO-220AB
INFINEON IRF3205LPBF	8 mOhm	20 V		4 V	10 V	175 °C	-55 °C	110 A	Through Hole	N-Channel	55 V	3247 pF	200 W	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	TO-262	146 nC
INFINEON IRF3205STRLPBF	8 mOhm	20 V		4 V	10 V	175 °C	-55 °C	110 A	Surface Mount	N-Channel	55 V	3247 pF	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	D2PAK	146 nC
INFINEON 64-2092PBF	6.5 mOhm	20 V	110 nC	4 V	10 V	175 °C	-55 °C	75 A	Surface Mount	N-Channel	55 V	3450 pF	170 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	D2PAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	37	$ 2.18
	Tube	1	$ 2.44
		10	$ 1.57
		100	$ 1.07
		500	$ 0.86
		1000	$ 0.79
		2000	$ 0.73
		5000	$ 0.71

Description

General part information

IRF3205 Series

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Documents

Technical documentation and resources