Discrete Semiconductor Products

SSM6J503NU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -6.0 A, 0.0324 Ω@4.5V, SOT-1220(UDFN6B)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -6.0 A, 0.0324 Ω@4.5V, SOT-1220(UDFN6B)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J503NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	32.4 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0324 Ω@4.5V, SOT-1220(UDFN6B)

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6J503NU,LF	840 pF	Surface Mount	8 V	1.5 V 4.5 V	6-UDFNB (2x2)	150 °C	6 A	MOSFET (Metal Oxide)	32.4 mOhm	12.8 nC	1 W	1 V	P-Channel	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2345	$ 0.55

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0324 Ω@4.5V, SOT-1220(UDFN6B)

Technical documentation and resources