Specification	SSM6N37FE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	12 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N37FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.25 A, 2.2 Ω@4.5V, SOT-563(ES6)

Part	Current - Continuous Drain (Id) @ 25°C	FET Feature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Configuration	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Mounting Type
Toshiba Semiconductor and Storage SSM6N37FE,LM	250 mA	Logic Level Gate	ES6	12 pF	150 °C	2 N-Channel (Dual)	SOT-563 SOT-666	1 V	2.2 Ohm	20 V	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3200	$ 0.32

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.25 A, 2.2 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources