Specification	SSM6K217FE,LF

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	195 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

SSM6K217FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 40 V, 1.8 A, 0.208 Ω@4.5V, SOT-563(ES6)

Part	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type
Toshiba Semiconductor and Storage SSM6K217FE,LF	MOSFET (Metal Oxide)	12 V	1.2 V	130 pF	1.8 A	N-Channel	SOT-563 SOT-666	ES6	40 V	150 °C	1.8 V	8 V	500 mW	195 mOhm	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	21923	$ 0.16

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 40 V, 1.8 A, 0.208 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources