Discrete Semiconductor Products

IRFU3910PBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; IPAK TO-251 PACKAGE; 115 MOHM;

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRFU3910PBF

Active

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; IPAK TO-251 PACKAGE; 115 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU3910PBF

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	IPAK (TO-251AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFU3910 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Vgs (Max)	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)
INFINEON IRFU3910PBF	175 °C	-55 °C	79 W	20 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	115 mOhm	10 V	IPAK (TO-251AA)	44 nC	N-Channel	16 A	4 V	MOSFET (Metal Oxide)	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2974	$ 1.56
	Tube	1	$ 1.57
		10	$ 0.99
		100	$ 0.66
		500	$ 0.52
		1000	$ 0.48
		2000	$ 0.44
		5000	$ 0.40
		10000	$ 0.39
Newark	Each	1	$ 0.61
		10	$ 0.60
		100	$ 0.57
		500	$ 0.53
		1000	$ 0.44
		2500	$ 0.42
		12000	$ 0.40

Description

General part information

IRFU3910 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources