Discrete Semiconductor Products

SQM40010EL_GE3

LTB

MOSFET N-CH 40V 120A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 40V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SQM40010EL_GE3

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	230 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	17100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max)	1.6 mOhm, 1.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	FET Type	Gate Charge (Max)	Power Dissipation (Max)	Vgs (Max)	Grade	Package Name	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Qualification	Package / Case	Technology
Vishay Dale SQM40010EL_GE3	N-Channel	230 nC	375 W	20 V	Automotive	TO-263 (D2PAK)	Surface Mount	17100 pF	120 A	1.6 mOhm 1.6 mOhm	-55 °C	175 °C	40 V	10 V	4.5 V	2.5 V	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 3.93	1m+
		10	$ 2.58
		100	$ 1.81
	Digi-Reel®	1	$ 3.93	1m+
		10	$ 2.58
		100	$ 1.81
	N/A	705	$ 3.91	1m+
	Tape & Reel (TR)	800	$ 1.70	1m+
		1600	$ 1.45
		2400	$ 1.37
		5600	$ 1.31

3D models and CAD resources for this part

General part information

N-Channel 40 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources