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SOT89
Discrete Semiconductor Products

PBSS304NX,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 4.7 A NPN LOW VCESAT TRANSISTOR

SOT89
Discrete Semiconductor Products

PBSS304NX,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 4.7 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS304NX,115
Current - Collector (Ic) (Max) [Max]4.7 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Frequency - Transition130 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]2.1 W
QualificationAEC-Q100
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic245 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 11$ 1.22
MouserN/A 1$ 0.78
10$ 0.55
100$ 0.37
500$ 0.30
1000$ 0.26
2000$ 0.24
5000$ 0.23

Description

General part information

PBSS304NX Series

NPN low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.