IGI60F1414A1LAUMA1
ObsoleteIGI60F1414A1L COMBINES A HALF-BRIDGE POWER STAGE AND A 600 V ENHANCEMENT MODE COOLGAN™ HEMT WITH DEDICATED GATE DRIVERS IN A SMALL 8 X 8 MM QFN-28 PACKAGE.
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IGI60F1414A1LAUMA1
ObsoleteIGI60F1414A1L COMBINES A HALF-BRIDGE POWER STAGE AND A 600 V ENHANCEMENT MODE COOLGAN™ HEMT WITH DEDICATED GATE DRIVERS IN A SMALL 8 X 8 MM QFN-28 PACKAGE.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IGI60F1414A1LAUMA1 |
|---|---|
| Applications | General Purpose |
| Interface | Logic, PWM |
| Load Type | Resistive, Inductive |
| Mounting Type | Surface Mount |
| Output Configuration | Half Bridge (2) |
| Package / Case | 28-PowerTQFN |
| Rds On (Typ) | 140 mOhm |
| Rds On (Typ) | 140 mOhm |
| Supplier Device Package | PG-TIQFN-28-1 |
Pricing
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Description
General part information
XGI60F1414 Series
IGI60F1414A1L combines a half-bridge power stage consisting of two 140 mΩ (typ. RDS(on)) / 600V enhancement modeCoolGaN™ HEMTwith dedicated gate drivers in a small 8x8 mm QFN-28 package. It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the "on" state, a minimum on-resistance RDS(on)is always guaranteed, independent of temperature and parameter variations. The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300V/ns.
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Technical documentation and resources