Discrete Semiconductor Products

SI1012-TP

Obsolete

MOSFET N-CH 20V 500MA SOT523

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 500MA SOT523

Technical Specifications

Parameters and characteristics for this part

Specification	SI1012-TP

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	750 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max)	150 mW
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Micro Commercial Components SI1012-TP	N-Channel	150 mW	750 nC	1.2 V	MOSFET (Metal Oxide)	20 V	SOT-523	100 pF	500 mA	-55 °C	150 °C	850 mOhm	Surface Mount	SOT-523	4.5 V	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 500mA (Tc) 150mW (Tc) Surface Mount SOT-523

Technical documentation and resources