Discrete Semiconductor Products

RJK03M4DPA-00#J5A

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NCH POWER MOSFET 30V 35A 4.6MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 35A 4.6MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M4DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	2170 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 35A 4.6mohm Power SON-8 5x6

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK03M4DPA-00#J5A	4.5 V 10 V	30 V	150 °C	MOSFET (Metal Oxide)	2170 pF	8-WFDFN Exposed Pad	4.6 mOhm	20 V	N-Channel	8-WPAK	Surface Mount	12 nC	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	6000	$ 2.39

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources