Discrete Semiconductor Products

IFF600B12ME4B11BOSA1

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HIGH RELIABILITY IGBT MODULES IC

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Discrete Semiconductor Products

Unknown

HIGH RELIABILITY IGBT MODULES IC

Technical Specifications

Parameters and characteristics for this part

Specification	IFF600B12ME4B11BOSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	600 A
Current - Collector Cutoff (Max) [Max]	3 mA
IGBT Type	Trench Field Stop
Input	Standard
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	20 mW
Supplier Device Package	AG-ECONOD-5
Vce(on) (Max) @ Vge, Ic [Max]	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Mounting Type	Vce(on) (Max) @ Vge, Ic [Max]	IGBT Type	Power - Max [Max]	NTC Thermistor	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Input	Current - Collector (Ic) (Max) [Max]	Configuration	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IFF600B12ME4B11BOSA1	Chassis Mount	2.1 V	Trench Field Stop	20 mW		Module	1200 V	AG-ECONOD-5	Standard	600 A	Half Bridge	3 mA	-40 C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Field Stop Half Bridge 1200 V 600 A 20 mW Chassis Mount AG-ECONOD-5

Technical documentation and resources