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ITO220AB
Discrete Semiconductor Products

VF20120C-E3/4W

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ITO220AB
Discrete Semiconductor Products

VF20120C-E3/4W

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationVF20120C-E3/4W
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr700 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Speed500 ns, 200 mA
Supplier Device PackageITO-220AB
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]120 V
Voltage - Forward (Vf) (Max) @ If900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1000$ 2.64
Tube 1$ 1.84
10$ 1.53
100$ 1.21
500$ 1.03
1000$ 0.87
2000$ 0.83
5000$ 0.80
10000$ 0.77

Description

General part information

VF20120 Series

Diode Array 1 Pair Common Cathode 120 V 10A Through Hole TO-220-3 Full Pack, Isolated Tab

Documents

Technical documentation and resources