Specification	SSM3K16CT,L3F

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.1 V

SSM3K16CT Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-883(CST3)

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K16CT,L3F	CST3	100 mA	1.1 V	Surface Mount	MOSFET (Metal Oxide)	20 V	1.5 V	4 V	100 mW	N-Channel	3 Ohm	SC-101 SOT-883	150 °C	9.3 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-883(CST3)

Technical documentation and resources