Discrete Semiconductor Products

MCG50N03-TP

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MOSFET N-CH 30V 50A DFN3333

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 50A DFN3333

Technical Specifications

Parameters and characteristics for this part

Specification	MCG50N03-TP

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type
MCC (Micro Commercial Components) MCG50N03-TP	28 nC	175 °C	-55 °C	Surface Mount	30 V	4.5 V 10 V	MOSFET (Metal Oxide)	6 mOhm	20 V	50 A	2.5 V	DFN3333	8-VDFN Exposed Pad	2150 pF	N-Channel
MCC (Micro Commercial Components) MCG50N03-TP	28 nC	175 °C	-55 °C	Surface Mount	30 V	4.5 V 10 V	MOSFET (Metal Oxide)	6 mOhm	20 V	50 A	2.5 V	DFN3333	8-VDFN Exposed Pad	2150 pF	N-Channel

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General part information

N-Channel 30 V 50A (Tc) 30W (Tc) Surface Mount DFN3333

Technical documentation and resources