Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMP065N180C |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16.1 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 9.20 | |
Description
General part information
HMP065N180C
GAN HEMT,650V,16.1A,185M,CASCODE
Documents
Technical documentation and resources
No documents available