
Discrete Semiconductor Products
IPA041N04NGXKSA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; TO-220 FULLPAK PACKAGE; 4.1 MOHM;
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Discrete Semiconductor Products
IPA041N04NGXKSA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; TO-220 FULLPAK PACKAGE; 4.1 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPA041N04NGXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) @ Id, Vgs | 4.1 mOhm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPA041 Series
New 40V and 60V product families, feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
Documents
Technical documentation and resources