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INFINEON IPA045N10N3GXKSA1
Discrete Semiconductor Products

IPA041N04NGXKSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; TO-220 FULLPAK PACKAGE; 4.1 MOHM;

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INFINEON IPA045N10N3GXKSA1
Discrete Semiconductor Products

IPA041N04NGXKSA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; TO-220 FULLPAK PACKAGE; 4.1 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPA041N04NGXKSA1
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds4500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs4.1 mOhm
Supplier Device PackagePG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 380$ 1.88
Tube 1$ 1.95
10$ 1.25
100$ 0.84
500$ 0.67
1000$ 0.61
2000$ 0.57
5000$ 0.53
NewarkEach 1$ 2.04
10$ 1.64
100$ 1.20
500$ 0.96
1000$ 0.86
2500$ 0.84
10000$ 0.82

Description

General part information

IPA041 Series

New 40V and 60V product families, feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.

Documents

Technical documentation and resources