Specification	MJD148J

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	85
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	1.6 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

MJD148 Series

45 V, 4 A NPN high power bipolar transistor

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature	Power - Max [Max]	Package / Case	Frequency - Transition	Supplier Device Package
Nexperia USA Inc. MJD148J	500 mV	45 V	1 µA	4 A	Surface Mount	85	NPN	150 °C	1.6 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 MHz	DPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5982	$ 0.96

General part information

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources