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SOT89
Discrete Semiconductor Products

BSR43,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 1 A NPN MEDIUM POWER TRANSISTOR

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SOT89
Discrete Semiconductor Products

BSR43,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 1 A NPN MEDIUM POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBSR43,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.35 W
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 481$ 0.81
MouserN/A 1$ 0.51
10$ 0.37
100$ 0.26
250$ 0.26
500$ 0.20
1000$ 0.16
2000$ 0.15
5000$ 0.13
10000$ 0.13

Description

General part information

BSR43 Series

NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33.