Discrete Semiconductor Products

IPI057N08N3 G

Obsolete

MOSFET N-CH 80V 80A TO262-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 80A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI057N08N3 G

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	69 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPI057N08N3 G	Through Hole	5.7 mOhm	69 nC	150 W	PG-TO262-3	3.5 V	MOSFET (Metal Oxide)	80 V	20 V	N-Channel	175 °C	-55 °C	I2PAK TO-262-3 Long Leads TO-262AA	6 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.16

General part information

N-Channel 80 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3

Technical documentation and resources