
BSS806NEH6327XTSA1
ActiveTRANS MOSFET N-CH 20V 2.3A 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101
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BSS806NEH6327XTSA1
ActiveTRANS MOSFET N-CH 20V 2.3A 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSS806NEH6327XTSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 500 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 57 mOhm |
| Supplier Device Package | PG-SOT23 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 750 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSS806 Series
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-ChannelSmall Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications includingLED Lighting, ADAS, body control units,SMPSandmotor control.
Documents
Technical documentation and resources