Discrete Semiconductor Products

SUD17N25-165-E3

Obsolete

MOSFET N-CH 250V 17A TO252

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 17A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SUD17N25-165-E3

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W, 3 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SUD17N25-165-E3	4 V	3 W 136 W	17 A	Surface Mount	165 mOhm	20 V	-55 °C	175 ░C	1950 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	MOSFET (Metal Oxide)	N-Channel	TO-252AA	250 V	42 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 17A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available