
S25FS512SDSMFV013
ActiveFLASH MEMORY, SERIAL NOR, 512 MBIT, 64M X 8BIT, SPI, SOIC, 16 PINS
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S25FS512SDSMFV013
ActiveFLASH MEMORY, SERIAL NOR, 512 MBIT, 64M X 8BIT, SPI, SOIC, 16 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | S25FS512SDSMFV013 |
|---|---|
| Clock Frequency | 80 MHz |
| Memory Format | FLASH |
| Memory Interface | QPI, SPI - Quad I/O |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 16-SOIC |
| Package / Case | 7.5 mm |
| Package / Case | 0.295 " |
| Supplier Device Package | 16-SOIC |
| Technology | FLASH - NOR |
| Voltage - Supply [Max] | 2 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
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Description
General part information
S25FS512S Series
S25FS512SDSMFV013 is a S25FS512S non-volatile serial peripheral interface (SPI) flash memory IC using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65nm process lithography. It connects to a host system via a serial peripheral interface (SPI). The FS-S eclipse architecture features a page programming buffer that allows up to 512bytes to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. It offers high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is an excellent solution for systems with limited space, signal connections, and power. It is an ideal for code shadowing to RAM, executing code directly (XIP), and storing reprogrammable data.
Documents
Technical documentation and resources