Discrete Semiconductor Products

RN1973(TE85L,F)

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TRANS 2NPN PREBIAS 0.2W US6

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Discrete Semiconductor Products

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TRANS 2NPN PREBIAS 0.2W US6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1973(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Resistor - Base (R1)	47 kOhms
Supplier Device Package	US6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Transistor Type	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Toshiba Semiconductor and Storage RN1973(TE85L,F)	200 mW	100 mA	300 mV	100 nA	47 kOhms	2 NPN - Pre-Biased (Dual)	US6	Surface Mount	120	50 V	6-TSSOP SC-88 SOT-363

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount US6

Technical documentation and resources

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