Specification	FDMC7582

Current - Continuous Drain (Id) @ 25°C	49 A, 16.7 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1795 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	52 W, 2.3 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	Power33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDMC7582 Series

N-Channel PowerTrench® MOSFET 25V, 49A, 5.0mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMC7582	16.7 A 49 A	MOSFET (Metal Oxide)	25 V	2.5 V	4.5 V 10 V	28 nC	2.3 W 52 W	-55 °C	150 °C	Power33	20 V	5 mOhm	N-Channel	Surface Mount	8-PowerTDFN	1795 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMC7582 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.