Discrete Semiconductor Products

M28S-C-AP

Obsolete

TRANS NPN 20V 1A TO-92

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 20V 1A TO-92

Technical Specifications

Parameters and characteristics for this part

Specification	M28S-C-AP

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	500
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
MCC (Micro Commercial Components) M28S-C-AP	5 µA	625 mW	TO-92	150 °C	-55 °C	20 V	NPN	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	Through Hole	1 A	500	100 MHz
MCC (Micro Commercial Components) M28S-C-AP	5 µA	625 mW	TO-92	150 °C	-55 °C	20 V	NPN	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	Through Hole	1 A	500	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 20 V 1 A 100MHz 625 mW Through Hole TO-92

Technical documentation and resources

No documents available