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TO-220AB PKG
Discrete Semiconductor Products

IRFB7734PBF

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INFINEON

STRONGIRFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 3.5 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRFB7734PBF

Active
INFINEON

STRONGIRFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 3.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB7734PBF
Current - Continuous Drain (Id) @ 25°C183 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]270 nC
Input Capacitance (Ciss) (Max) @ Vds10150 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)290 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 42$ 2.38
Tube 1$ 2.40
10$ 1.56
100$ 1.09
500$ 1.08

Description

General part information

IRFB7734 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources