Discrete Semiconductor Products

MPS455 APM TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 160VCBO 140VCEO 1.0A 1.0W

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 160VCBO 140VCEO 1.0A 1.0W

Technical Specifications

Parameters and characteristics for this part

Specification	MPS455 APM TIN/LEAD

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	0.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	140 V

Part	Package / Case	Package / Case	Supplier Device Package	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp MPS455 APM TIN/LEAD	TO-226AA	TO-226-3 TO-92-3	TO-92-3	Through Hole	1 W	100 hFE	100 nA	150 °C	-65 °C	0.7 V	100 MHz	1 A	NPN	140 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16
Mouser	N/A	6000	$ 0.15
		10000	$ 0.15

General part information

BIPOLAR TRANSISTORS - BJT NPN 160VCBO 140VCEO 1.0A 1.0W

Technical documentation and resources