Discrete Semiconductor Products

1SS133T-72

Obsolete

DIODE GEN PURP 80V 130MA MSD

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 80V 130MA MSD

Technical Specifications

Parameters and characteristics for this part

Specification	1SS133T-72

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	130 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	4 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	MSD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Operating Temperature - Junction [Max]	Speed	Speed	Mounting Type	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)
Rohm Semiconductor 1SS133T-72	175 ░C	200 mA	Any Speed	Through Hole	2 pF	500 nA	Standard	1.2 V	130 mA	Axial DO-204AG DO-34	MSD	80 V	4 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 80 V 130mA Through Hole MSD

Technical documentation and resources