Specification	PEMZ1,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	300 mW
Supplier Device Package	SOT-666
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PEMZ1 Series

NPN/PNP general purpose transistor

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition
Nexperia USA Inc. PEMZ1,115	200 mV	120	40 V	150 °C	100 nA	300 mW	Surface Mount	SOT-563 SOT-666	SOT-666	100 mA	1 NPN 1 PNP	100 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources