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Discrete Semiconductor Products

IXTP120N075T2

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 75V 120A 3-PIN(3+TAB) TO-220

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Discrete Semiconductor Products

IXTP120N075T2

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 75V 120A 3-PIN(3+TAB) TO-220

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP120N075T2

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4740 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	7.7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTP120N075T2 Series

DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXTP120N20X4	-55 °C	175 ░C	9.5 mOhm	20 V	TO-220 (IXTP)	4.5 V	200 V	417 W	TO-220-3	Through Hole	120 A	N-Channel	10 V	108 nC	MOSFET (Metal Oxide)	6100 pF
Littelfuse/Commercial Vehicle Products IXTP120N075T2	-55 °C	175 ░C		20 V	TO-220-3	4 V	75 V	250 W	TO-220-3	Through Hole	120 A	N-Channel	10 V		MOSFET (Metal Oxide)		78 nC	7.7 mOhm	4740 pF
Littelfuse/Commercial Vehicle Products IXTP120N04T2	-55 °C	175 ░C	6.1 mOhm	20 V	TO-220-3	4 V	40 V		TO-220-3	Through Hole	120 A	N-Channel	10 V		MOSFET (Metal Oxide)	3240 pF	58 nC			200 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.61
		50	$ 2.07
		100	$ 1.78
		500	$ 1.74
Newark	Each	100	$ 2.59
		500	$ 2.36
		1000	$ 2.08
		2500	$ 1.93

Description

General part information

IXTP120N075T2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources

No documents available