Discrete Semiconductor Products

1N5826R

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DIODE SCHOTTKY REV 20V 15A DO5

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY REV 20V 15A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N5826R

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed	500 ns, 200 mA
Supplier Device Package	DO-5
Technology	Reverse Polarity, Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	440 mV

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology
GeneSiC Semiconductor 1N5826R	DO-5	440 mV	20 V	DO-203AB DO-5 Stud	200 mA 500 ns	15 A	Chassis Stud Mount	150 °C	-65 C	10 mA	Reverse Polarity Schottky

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General part information

Diode 20 V 15A Chassis, Stud Mount DO-5

Technical documentation and resources