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PBSS4160DPN-QX
Discrete Semiconductor Products

PBSS4160DPN-QX

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Nexperia USA Inc.

60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

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PBSS4160DPN-QX
Discrete Semiconductor Products

PBSS4160DPN-QX

Active
Nexperia USA Inc.

60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160DPN-QX
Current - Collector (Ic) (Max)770 mA, 870 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce150, 200
Frequency - Transition185 MHz, 220 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 ░C
Package / CaseSOT-457, SC-74
Power - Max [Max]420 mW
QualificationAEC-Q101
Supplier Device Package6-TSOP
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic250 mV, 330 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 250$ 0.67

Description

General part information

PBSS4160DPN-Q Series

NPN/PNP low VCEsattransistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.