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SIA527DJ-T1-GE3
Discrete Semiconductor Products

SIA917DJ-T1-GE3

Obsolete
Vishay Dale

MOSFET 2P-CH 20V 4.5A PPAK8X8

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SIA527DJ-T1-GE3
Discrete Semiconductor Products

SIA917DJ-T1-GE3

Obsolete
Vishay Dale

MOSFET 2P-CH 20V 4.5A PPAK8X8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIA917DJ-T1-GE3
Channel Count2
ConfigurationP-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)4.5 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Max)9 nC
Input Capacitance (Ciss) (Max)250 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SC-70-6 Dual
Package NamePowerPAK® SC-70-6 Dual
Power - Max6.5 W
Rds On (Max)110 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

3D models and CAD resources for this part

Description

General part information

SIA917 Series

Mosfet Array 20V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual

Documents

Technical documentation and resources

No documents available