Discrete Semiconductor Products

IDH03SG60CXKSA2

Obsolete

DIODE SIL CARB 600V 3A PGTO2201

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 600V 3A PGTO2201

Technical Specifications

Parameters and characteristics for this part

Specification	IDH03SG60CXKSA2

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed
INFINEON IDH03SG60CXKSA2	15 µA	Through Hole	PG-TO220-2-1	3 A	175 ░C	-55 °C	TO-220-2	600 V	SiC (Silicon Carbide) Schottky	2.3 V	0 ns	60 pF	500 mA

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General part information

DIODE SIL CARB 600V 3A PGTO2201

Technical documentation and resources

No documents available