Discrete Semiconductor Products

SIHG460B-GE3

LTB

MOSFET N-CH 500V 20A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 20A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG460B-GE3

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Input Capacitance (Ciss) (Max)	3094 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	278 W
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Package / Case	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Technology	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package Name	Rds On (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	FET Type
Vishay Dale SIHG460B-GE3	TO-247-3	4 V	3094 pF	170 nC	MOSFET (Metal Oxide)	20 V	20 A	500 V	TO-247AC	250 mOhm	Through Hole	10 V	-55 °C	150 °C	278 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.91	1m+
	Tube	500	$ 2.31	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 20A (Tc) 278W (Tc) Through Hole TO-247AC

Technical documentation and resources