Discrete Semiconductor Products

ISL9R8120P2

Obsolete

ON Semiconductor

DIODE GEN PURP 1.2KV 8A TO220-2L

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Discrete Semiconductor Products

ISL9R8120P2

Obsolete

ON Semiconductor

DIODE GEN PURP 1.2KV 8A TO220-2L

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ISL9R8120P2

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	300 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2L
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.3 V

ISL9 Series

Part	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Test Condition	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Gate Charge	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Input Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor ISL9R8120P2	300 ns	TO-220-2	TO-220-2L	1.2 kV	150 °C	-55 °C	8 A	30 pF	3.3 V	Avalanche	200 mA 500 ns	100 µA	Through Hole
ON Semiconductor ISL9K860P3	30 ns	TO-220-3	TO-220-3	600 V	175 ░C	-55 C			2.4 V	Avalanche	200 mA 500 ns	100 µA	Through Hole	1 Pair Common Cathode	8 A
ON Semiconductor ISL9N302AP3		TO-220-3	TO-220-3							MOSFET (Metal Oxide)			Through Hole			4.5 V 10 V	20 V	11000 pF	30 V	300 nC	3 V	-55 °C	175 ░C	N-Channel	345 W	75 A
ON Semiconductor ISL9R8120S3ST	300 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	1.2 kV	150 °C	-55 °C	8 A	30 pF	3.3 V	Avalanche	200 mA 500 ns	100 µA	Surface Mount
ON Semiconductor ISL9K18120G3	70 ns	TO-247-3	TO-247-3	1.2 kV	150 °C	-55 °C			3.3 V	Avalanche	200 mA 500 ns	100 µA	Through Hole	1 Pair Common Cathode	18 A
ON Semiconductor ISL9V5036S3ST_SB82170		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)										Surface Mount									-40 C	175 °C				5 V 300 V 1000 Ohm	10.8 µs	-	32 nC	250 W	46 A	1.6 V	390 V	Logic
ON Semiconductor ISL9V5045S3S		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)										Surface Mount									-40 C	175 °C				5 V 300 V 1000 Ohm	10.8 µs	-	32 nC	300 W	51 A	1.6 V	480 V	Logic
ON Semiconductor ISL9K30120G3		TO-247-3	TO-247-3	1.2 kV	150 °C	-55 °C			3.3 V	Avalanche	200 mA 500 ns	100 µA	Through Hole	1 Pair Common Cathode	30 A
ON Semiconductor ISL9R460S3ST	22 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	600 V	175 ░C	-55 C	4 A		2.4 V	Avalanche	200 mA 500 ns	100 µA	Surface Mount
ON Semiconductor ISL9N303AS3ST		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)							MOSFET (Metal Oxide)			Surface Mount			4.5 V 10 V	20 V		30 V		3 V	-55 °C	175 ░C	N-Channel		75 A										215 W	7000 pF	172 nC	3.2 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ISL9 Series

Diode 1200 V 8A Through Hole TO-220-2L

Documents

Technical documentation and resources