Discrete Semiconductor Products

IXFH60N65X2

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH60N65X2

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH60N65X2

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Input Capacitance (Ciss) (Max) @ Vds	6180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	780 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFH60N65X2-4 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXFH60N50P3	5 V	N-Channel	500 V	30 V	60 A	96 nC	MOSFET (Metal Oxide)	6250 pF	-55 °C	150 °C	Through Hole	TO-247-3	10 V	100 mOhm	1040 W	TO-247AD (IXFH)
Littelfuse/Commercial Vehicle Products IXFH60N65X2-4	5 V	N-Channel	650 V	30 V	60 A		MOSFET (Metal Oxide)	6300 pF	-55 °C	150 °C	Through Hole	TO-247-4	10 V	52 mOhm		TO-247-4L	108 nC	780 W
Littelfuse/Commercial Vehicle Products IXFH60N65X2	5.5 V	N-Channel	650 V	30 V	60 A	107 nC	MOSFET (Metal Oxide)	6180 pF	-55 °C	150 °C	Through Hole	TO-247-3	10 V	52 mOhm		TO-247 (IXTH)		780 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 8.85
		90	$ 8.32
		300	$ 8.06
		750	$ 7.54
Newark	Each	250	$ 7.27
		500	$ 6.75

Description

General part information

IXFH60N65X2-4 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources