Discrete Semiconductor Products

IDD12SG60CXTMA2

Obsolete

DIODE SIL CARB 600V 12A TO252-3

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 600V 12A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDD12SG60CXTMA2

Capacitance @ Vr, F	310 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO252-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Package / Case
INFINEON IDD12SG60CXTMA2	600 V	PG-TO252-3	2.1 V	500 mA	12 A	0 ns	100 µA	310 pF	175 ░C	-55 °C	Surface Mount	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.45

General part information

Diode 600 V 12A Surface Mount PG-TO252-3

Technical documentation and resources