Technical Specifications
Parameters and characteristics for this part
| Specification | IPP65R310CFDXKSA2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11.4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 104.2 W |
| Rds On (Max) @ Id, Vgs | 310 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
| Part | Vgs(th) (Max) @ Id | Grade | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Qualification | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 4.5 V | Automotive | 650 V | Through Hole | 20 V | -40 °C | 150 °C | TO-220-3 | MOSFET (Metal Oxide) | 10 V | 41 nC | PG-TO220-3 | 11.4 A | 1110 pF | N-Channel | 310 mOhm | 104.2 W | AEC-Q101 | |
INFINEON | 4.5 V | 650 V | Through Hole | 20 V | -55 °C | 150 °C | TO-220-3 | MOSFET (Metal Oxide) | 10 V | 41 nC | PG-TO220-3 | 11.4 A | N-Channel | 310 mOhm | 104.2 W | 1100 pF | |||
INFINEON | 4.5 V | 650 V | Through Hole | 20 V | -55 °C | 150 °C | TO-220-3 | MOSFET (Metal Oxide) | 10 V | 41 nC | PG-TO220-3 | 11.4 A | N-Channel | 310 mOhm | 104.2 W | 1100 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 236 | $ 2.85 | |
| Tube | 1 | $ 3.41 | ||
| 10 | $ 2.23 | |||
| 100 | $ 1.55 | |||
| 500 | $ 1.26 | |||
| 1000 | $ 1.17 | |||
| 2000 | $ 1.13 | |||
Description
General part information
IPP65R310 Series
Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Documents
Technical documentation and resources