Discrete Semiconductor Products

IAUCN04S6N018TATMA1

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MOSFET_(20V 40V)

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Discrete Semiconductor Products

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MOSFET_(20V 40V)

Technical Specifications

Parameters and characteristics for this part

Specification	IAUCN04S6N018TATMA1

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Part	Grade	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case
INFINEON IAUCN04S6N018TATMA1
INFINEON IAUCN04S6N013TATMA1	Automotive	40 V	133 W	MOSFET (Metal Oxide)	3 V	PG-LHDSO-10-1	N-Channel	175 °C	-55 °C	4810 pF	1.32 mOhm	7 V 10 V	AEC-Q101	Surface Mount	230 A	20 V	69 nC
INFINEON IAUCN04S6N007TATMA1	Automotive	40 V	206 W	MOSFET (Metal Oxide)	3 V	PG-LHDSO-10-3	N-Channel	175 °C	-55 °C		0.75 mOhm	7 V 10 V	AEC-Q101	Surface Mount	390 A	20 V		130 nC	9035 pF	0.209 in 5.3 mm	10-LSOP
INFINEON IAUCN04S6N009TATMA1	Automotive	40 V	178 W	MOSFET (Metal Oxide)	3 V	PG-LHDSO-10-2	N-Channel	175 °C	-55 °C	7345 pF	0.89 mOhm	7 V 10 V	AEC-Q101	Surface Mount	330 A	20 V	104 nC			0.209 in 5.3 mm	10-LSOP

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General part information

MOSFET_(20V 40V)

Technical documentation and resources

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